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NP109N055PUK-E2-AY	文件：269.08 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP109N055PUK-E2-AY	文件：109.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N03PUG	文件：344.51 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PDG	文件：344.33 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUG	文件：344.34 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUJ	文件：344.46 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUJ	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUJ-E1B-AY	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUJ-E2B-AY	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：345.03 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUK_V01	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E1-AY	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E1-AY	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E2-AY	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E2-AY	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK	文件：133.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK	文件：267.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK_V01	文件：267.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
NP1
制造商：
Distributed By MCM
功能描述：
Noise Plug Pink Noise Generator
制造商：
MCM
功能描述：
NOISE PLUG PINK NOISE GENERATOR,
FEATURES：
20 HZ-20 KHZ PRECISION REFERENCE, ACCURATE 3 DB PER OCTAVE ROLLOFF, BALANCED MICROPHONE LEVEL OUTPUT, BUILT-IN PHANTOM POWER INDICATOR, COMPACT DESIGN, NO BATTERIES REQUIRED
制造商：
Hubbell Premise Wiring
制造商：
Hubbell Wiring Device-Kellems
功能描述：
WALLPLATE, 1-G, TOGG, BR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	NP16KT				50		询价
深圳市荣泽信电子科技有限公司	NP100P06PDG	NEC	23+	TO-252	1000	全新原装的现货	询价
深圳市力通伟业半导体有限公司	NP180N04TDG	NEC	13+	TO-263-7	9500	特价热销现货库存	询价
深圳市勤思达科技有限公司	NP15P06SLG	NEC	1415+	TO-252(DPAK)	28500	全新原装正品,优势热卖	询价
深圳市恒创达实业有限公司	NP1800SCMCT3G		17+	DO214AASMB	6200	100%原装正品现货	询价
深圳市毅创腾电子科技有限公司	NP1800SAT3G	ON		SMB	4200	正品原装--自家现货-实单可谈	询价
深圳市凯斯宇科技有限公司	NP110N04PDG-E1-AY	RENESAS	2022	TO263	2400	原厂原装正品,价格超越代理	询价
深圳市福安瓯科技有限公司	NP1580HS	NP	22+	SOP-8	6000	福安瓯为您提供真芯库存,真诚服务	询价
千层芯半导体(深圳)有限公司	NP1H105M05011BB	三和	17+	引线电解电容	50	大量原装现货供应	询价
深圳市弘为电子有限公司	NP16V100M4X7TA25	ELGENELECTR	16+	原装进口原厂原包接受订货	2500	原装现货假一罚十	询价

更多NP1供应商更新时间2024-6-11 16:00:00

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