Packing List Envelopes

文件：15.17 Kbytes 页数：2 Pages

3M

丝印：NP1；Package：SOT353；DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Features - Ultra-Small Surface Mount Package - Surface Mount Package Suited for Automated Assembly - Simplifies Circuit Design and Reduces Board Space - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. Green Device (Note 3) - Qualified to AEC-Q101 Standards

文件：405.92 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：NP1；Package：SOT26(TSOP-6)；20 V Complementary Trench MOSFET N-Channel:VDS = 20V

文件：713.14 Kbytes 页数：8 Pages

LRC

乐山无线电

丝印：NP1；Package：SOT26(TSOP-6)；20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V;

文件：2.05338 Mbytes 页数：8 Pages

LRC

乐山无线电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.64 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：281.33 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID

文件：223.75 Kbytes 页数：8 Pages

RENESAS

瑞萨