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NP1	文件：15.17 Kbytes Page：2 Pages	Packing List Envelopes	3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司	3M
NP100N04MDH	文件：371.65 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04MUH	文件：371.64 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04NDH	文件：280.83 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04NUH	文件：280.83 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04NUJ	文件：223.75 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04NUJ	文件：281.33 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04NUJ.S18-AY	文件：223.75 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PDH	文件：344.75 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04PUH	文件：344.72 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04PUK	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK	文件：345.38 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP100N04PUK_V01	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK-E1-AY	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK-E1-AY	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK-E2-AY	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N04PUK-E2-AY	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N055PUK	文件：110 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP100N055PUK	文件：268.66 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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详细参数

型号：
NP1
制造商：
Distributed By MCM
功能描述：
Noise Plug Pink Noise Generator
制造商：
MCM
功能描述：
NOISE PLUG PINK NOISE GENERATOR,
FEATURES：
20 HZ-20 KHZ PRECISION REFERENCE, ACCURATE 3 DB PER OCTAVE ROLLOFF, BALANCED MICROPHONE LEVEL OUTPUT, BUILT-IN PHANTOM POWER INDICATOR, COMPACT DESIGN, NO BATTERIES REQUIRED
制造商：
Hubbell Premise Wiring
制造商：
Hubbell Wiring Device-Kellems
功能描述：
WALLPLATE, 1-G, TOGG, BR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	NP16KT				50		询价
深圳市荣泽信电子科技有限公司	NP100P06PDG	NEC	10+	TO-252	1000	全新原装的现货	询价
深圳市力通伟业半导体有限公司	NP180N04TDG	NEC	13+	TO-263-7	9500	特价热销现货库存	询价
深圳市勤思达科技有限公司	NP15P06SLG	NEC	1415+	TO-252(DPAK)	28500	全新原装正品,优势热卖	询价
深圳市莱克讯科技有限公司	NP1800SBT3G	ON	2017+	SMB	35685	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市恒创达实业有限公司	NP1800SCMCT3G		17+	DO214AASMB	6200	100%原装正品现货	询价
深圳市毅创腾电子科技有限公司	NP1800SAT3G	ON		SMB	4200	正品原装--自家现货-实单可谈	询价
深圳市凯斯宇科技有限公司	NP110N04PDG-E1-AY	RENESAS	2022	TO263	2400	原厂原装正品,价格超越代理	询价
深圳市向鸿伟业电子有限公司	NP14	FAIRCHILD	10+	MAB08A	337	门市原装现货!支持实单,一片起卖!	询价
深圳市福安瓯科技有限公司	NP1580HS	NP	22+	SOP-8	6000	福安瓯为您提供真芯库存,真诚服务	询价

更多NP1供应商更新时间2024-5-19 16:00:00

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