零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NP4 | Packing List Envelopes | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |
替换型号
详细参数
- 型号:
NP4
- 制造商:
Farnell/Pro-Power
- 功能描述:
CABLE CLEAT PK25
- 制造商:
pro-power
- 功能描述:
CABLE CLEAT, PK25
- 制造商:
PRIVATE LABEL
- 功能描述:
CABLE CLEAT, PK25, Clip
- Style:
Round, External
- Length:
15mm,
- Height:
28mm, External
- Width:
15mm, Clip
- Material:
(Not Available), Clip
- Colour:
Black, Accessory
- Type:
Cable Clip, Cable Diameter
- Max:
10.2mm, Cable Diameter
- Min:
7.6mm, , RoHS
- Compliant:
NA
- 制造商:
Hubbell Wiring Device-Kellems
- 功能描述:
WALLPLATE, 4-G, 4) TOGG, BR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
3000 |
公司存货 |
询价 | |||||
NEC |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
NEC |
2017+ |
TO263 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
NEC |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
NEC |
23+ |
TO-263 |
11805 |
全新原装 |
询价 | ||
22+ |
SOP |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | |||
RENESA |
2022+ |
TO-252 |
5000 |
全现原装公司现货 |
询价 | ||
EnerSys |
新 |
172 |
全新原装 货期两周 |
询价 | |||
NEC |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
富士 |
1844+ |
LQFP |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
相关规格书
更多- NP4510
- NPC7629
- NPC76365
- NS746
- NTC-21
- NTE1010
- NTE1012
- NTE1014
- NTE1016
- NTE1018
- NTE1022
- NTE1024
- NTE1027
- NTE1029
- NTE1031
- NTE1033
- NTE1035
- NTE1037
- NTE1039
- NTE1041
- NTE1043
- NTE1046
- NTE1048
- NTE1050
- NTE1052
- NTE1054
- NTE1056
- NTE1058
- NTE1061
- NTE1064
- NTE1066
- NTE1068
- NTE1070
- NTE1072
- NTE1074
- NTE1079
- NTE1081A
- NTE1083
- NTE1085
- NTE1089
- NTE1091
- NTE1094
- NTE1097
- NTE1099
- NTE1101
相关库存
更多- NPC544
- NPC76315
- NS142
- NT826AB
- NTE1006
- NTE1011
- NTE1013
- NTE1015
- NTE1017
- NTE1019
- NTE1023
- NTE1025
- NTE1028
- NTE1030
- NTE1032
- NTE1034
- NTE1036
- NTE1038
- NTE1040
- NTE1042
- NTE1045
- NTE1047
- NTE1049
- NTE1051
- NTE1053
- NTE1055
- NTE1057
- NTE1060
- NTE1062
- NTE1065
- NTE1067
- NTE1069
- NTE1071
- NTE1073
- NTE1075A
- NTE1080
- NTE1082
- NTE1084
- NTE1087
- NTE1090
- NTE1092
- NTE1096
- NTE1098
- NTE1100
- NTE1102