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NP4

Packing List Envelopes

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

NP40N055CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055CLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055DLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055DLE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055EHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP40N055EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) •Lowinputcapacitance Ciss=1070pFTYP. •Built-ingateprotectiondiode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP40N055ELE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

详细参数

  • 型号:

    NP4

  • 制造商:

    Farnell/Pro-Power

  • 功能描述:

    CABLE CLEAT PK25

  • 制造商:

    pro-power

  • 功能描述:

    CABLE CLEAT, PK25

  • 制造商:

    PRIVATE LABEL

  • 功能描述:

    CABLE CLEAT, PK25, Clip

  • Style:

    Round, External

  • Length:

    15mm,

  • Height:

    28mm, External

  • Width:

    15mm, Clip

  • Material:

    (Not Available), Clip

  • Colour:

    Black, Accessory

  • Type:

    Cable Clip, Cable Diameter

  • Max:

    10.2mm, Cable Diameter

  • Min:

    7.6mm, , RoHS

  • Compliant:

    NA

  • 制造商:

    Hubbell Wiring Device-Kellems

  • 功能描述:

    WALLPLATE, 4-G, 4) TOGG, BR

供应商型号品牌批号封装库存备注价格
3000
公司存货
询价
NEC
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
NEC
2017+
TO263
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NEC
1415+
TO-263
28500
全新原装正品,优势热卖
询价
NEC
23+
TO-263
11805
全新原装
询价
22+
SOP
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
RENESA
2022+
TO-252
5000
全现原装公司现货
询价
EnerSys
172
全新原装 货期两周
询价
NEC
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
询价
富士
1844+
LQFP
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多NP4供应商 更新时间2024-4-27 16:00:00