isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 620 V, 1.8 

文件：159.89 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 620 V, 1.8 

文件：159.89 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 620 V, 1.8 

文件：159.89 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.29 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.33 Kbytes 页数：2 Pages

ISC

无锡固电