isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.7Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 500 V, 2.7 

文件：127.75 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 500 V, 2.7 

文件：127.75 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 500 V, 2.7 

文件：127.75 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：124.28 Kbytes 页数：8 Pages

ONSEMI

安森美半导体