丝印：NCE6005AS；Package：SOP-8；LCE N-Channel Enhancement Mode Power MOSFET

文件：948.6 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6005AS；Package：SOP-8；LCE N-Channel Enhancement Mode Power MOSFET

文件：949.05 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6005AR；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

文件：1.14303 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

12-200V N-Channel Trench MOSFET

\n The NCE6005AR uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =5A\nR DS(ON) <35m? @ V GS =10V (Typ.26m?)\nR DS(ON) <45m? @ V GS =4.5V (Typ.32m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• ;

NCEPower

新洁能

12-200V N-Channel Trench MOSFET

The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • VDS=60V,ID=5ARDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ)RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellent package for good heat dissipation• Special process technology ;

NCEPower

新洁能

N沟道 MOSFET

NCEPower

新洁能