P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：495.31 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE P-Channel Enhancement Mode Power MOSFET

文件：268.11 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：495.09 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3407E uses advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications.It is ESD protected. General Features ● VDS = -30V,ID = -4.3A RDS(ON) = 28mΩ @ VGS=-10V (typ) RDS(ON) = 38mΩ @ VGS=-4.5V (typ) E

文件：734.23 Kbytes 页数：7 Pages

NCEPOWER

新洁能