丝印：TO-247；Package：NCE3N170T；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

文件：647.96 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

文件：702.3 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体