N沟道 MOSFET

The NCE40H20A uses advancedtrench technology and design to provide excellent RDS(ON) with lowgate charge. It can be used in a wide variety of applications. • VDS= 40V,ID =200ARDS(ON) < 2.6mΩ@ VGS=10V  (Typ:2.0mΩ)• Specialprocess technology for high ESD capability• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：343.32 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：419.63 Kbytes 页数：7 Pages

NCEPOWER

新洁能

SOT-23

NCE Power/新洁能

上传：深圳市浩翊科技有限公司

DFN16-2L

NCEPOWER新洁能NCE

上传：深圳市光与电子有限公司