丝印：4003A；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty

文件：701.61 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：67.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件：90.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体