12-200V N-Channel Trench MOSFET

The NCE4012S usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications. • VDS=40V,ID =12ARDS(ON) <12mΩ@ VGS=10V (Typ. 8.4 mΩ)RDS(ON) <18mΩ@ VGS=4.5V (Typ. 12.3 mΩ)• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation• Specialprocess technol;

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