NCE4080

12-200V N-Channel Trench MOSFET; \n• V DS =40V,I D =80A\nR DS(ON) <6.5m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n;

\n The NCE4080 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.\n

NCE4080

NCE N-Channel Enhancement Mode Power MOSFET

NCE4080

N-Channel 4 -V (D-S) MOSFET

NCE4080K

NCE N-Channel Enhancement Mode Power MOSFET

NCE4080K

N-Channel 4 -V (D-S) MOSFET

NCE4080K

12-200V N-Channel Trench MOSFET;