NCE3401AY-P规格书库存现货台舟电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NCE3401AY-P	文件：3.78615 Mbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET General Features VDs = -30V,ID = -4.2A RDS(ON) 文件：3.78615 Mbytes 页数：6 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
NCE3401BY	文件：270.41 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.4A RDS(ON) 文件：270.41 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE3401E	文件：620.17 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = -30V,ID = -4.4A RDS(ON 文件：620.17 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE3401Y	文件：280.23 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET 文件：280.23 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE3401AY-P供应商更新时间2026-1-29 11:06:00