NCE80TD65BT

型号：NCE80TD65BT；Package：TO-247；650V, 80A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE80TD65BT4

型号：NCE80TD65BT4；Package：TO-247-4L；650V, 80A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE8290B

型号：NCE8290B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8290Busesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications. GeneralFeatures ●VDS=82V,ID=90A RDS(ON)

NCE8295A

型号：NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8295Ausesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=82V,ID=95A RDS(ON)

NCE8295AD

型号：NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8295ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=82V,ID=95A RDS(ON)

NCE8295AG

型号：NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8295AGusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.Application ●Powerswitchingapplication ●HardswitchedandHighfrequencycircuit

NCE8295AI

型号：NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8295AIusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=82V,ID=95A RDS(ON)

NCE8295AK

型号：NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE8295AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=82V,ID=95A RDS(ON)

NCE82H140

型号：NCE82H140；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE82H140usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Features ●VDS=82V,ID=140A RDS(ON)

NCE82H140D

型号：NCE82H140D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE82H140Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=82V,ID=140A RDS(ON)