NCE70T900K

型号：NCE70T900K；Package：TO-252；N-Channel Super Junction Power MOSFET Ⅲ

GeneralDescription Theseriesofdevicesuseadvancedtrenchgatesuper junctiontechnologyanddesigntoprovideexcellentRDS(ON) withlowgatecharge.ThissuperjunctionMOSFETfitsthe industry’sAC-DCSMPSrequirementsforPFC,AC/DC powerconversion,andindustrialpowerapplications.

NCE70T900R

型号：NCE70T900R；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET Ⅲ

GeneralDescription Theseriesofdevicesuseadvancedtrenchgatesuper junctiontechnologyanddesigntoprovideexcellentRDS(ON) withlowgatecharge.ThissuperjunctionMOSFETfitsthe industry’sAC-DCSMPSrequirementsforPFC,AC/DC powerconversion,andindustrialpowerapplications.

NCE7190A

型号：NCE7190A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE7190Ausesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=71V,ID=100A RDS(ON)

NCE75ED120VT4

型号：NCE75ED120VT4；Package：TO-247-4L；1200V 75A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7TechnologyOfferin

NCE75ED120VTP

型号：NCE75ED120VTP；Package：TO-247P-3L；1200V 75A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7TechnologyOfferin

NCE75ED120VTP4

型号：NCE75ED120VTP4；Package：TO-247P-4L；1200V 75A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7TechnologyOfferin

NCE75ED65VT

型号：NCE75ED65VT；Package：TO-247-3L；650V 75A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE75ED65VT4

型号：NCE75ED65VT4；Package：TO-247-4L；650V 75A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE75H25

型号：NCE75H25；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET (Primary)

Description TheNCE75H25usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=75V,ID=250A RDS(ON)

NCE75H25T

型号：NCE75H25T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE75H25Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=75V,ID=250A RDS(ON)