丝印：NCE75H25；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET (Primary)

Description The NCE75H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：654.96 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75H25T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE75H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：693.56 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75H25；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET (Primary)

Description The NCE75H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：654.96 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE75H25T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE75H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON)

文件：693.56 Kbytes 页数：7 Pages

NCEPOWER

新洁能