NCE75ED120VT4中文资料新洁能数据手册PDF规格书

General Description

Using NCE's proprietary high density trench gate design and advanced FS

(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior

conduction and switching performances, and easy parallel operation;

特性 Features

 Trench Field Stop Gen.7 Technology Offering

 Low saturation voltage: VCEsat = 1.65V(Typ.) @ IC = 75 A

 High speed switching，low switching losses

 Maximum junction temperature Tvjmax = 175°C

 Tighten parameter distribution

 High ruggedness, temperature stable behavior

 Pb-free lead plating; RoHS compliant

Application

 PV power

 Three-level Solar String Inverter

 UPS