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零件型号	下载订购	功能描述	制造商上传企业	LOGO
NAND01GR3B2BZF5E	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2BZF5F	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2BZF6E	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2BZF6F	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2C	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2CN5E	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2CN5F	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2CN6E	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2CN6F	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX
NAND01GR3B2CZA5E	文件：1.6385 Mbytes Page：67 Pages	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx	NUMONYX

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技术参数

存储器格式：
闪存
技术：
FLASH - NAND
存储容量：
1Gb （128M x 8）
写周期时间 - 字，页：
30ns
访问时间：
30ns
存储器接口：
并联
电压 - 电源：
1.7V ~ 1.95V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
63-TFBGA
供应商器件封装：
63-VFBGA（9x11）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛芯源科技有限公司	NAND01GR3B	ST	19+	BGA	32000	原装正品,现货特价	询价
深圳市威尔健半导体有限公司	NAND01GR3B	ST/意法	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NAND01GR3B	ST	21+	BGA	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	NAND01GR3B	ST/意法	23+	BGA	20000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市美思瑞电子科技有限公司	NAND01GR3B	ST	22+	BGA	12245	现货,原厂原装假一罚十!	询价
深圳市得捷芯城科技有限公司	NAND01GR3B	ST/意法	24+	NA/	200	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市博中泰实业有限公司	NAND01GR3B	ST/意法	24+	BGA	60000	全新原装现货	询价
深圳市恒创达实业有限公司	NAND01GR3B2CZA6E	Micron	17+	BGA	6200		询价
深圳市毅创腾电子科技有限公司	NAND01GR3B2CZA6E	Numonyx		BGA	320	正品原装--自家现货-实单可谈	询价
深圳市卓越微芯电子有限公司	NAND01GR3B2CZA6E	STM	2020+	VFBGA63	12600	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多NAND01GR3B供应商更新时间2022-6-12 10:12:00

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