首页 >NAND01GR3B2CN6E>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

NAND01GR3B2CN6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR3B2CN6E

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR3B2CN6E

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GR3B2CN6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR3B2CN6F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR3B2CN6F

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR3B2CN6F

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

详细参数

  • 型号:

    NAND01GR3B2CN6E

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    NAND - Trays

供应商型号品牌批号封装库存备注价格
23+
TSSOP48
13000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
NUMONYX
23+
BGA
6556
全新原装正品现货,支持订货
询价
NUMONYX
20+
BGA
6556
进口原装现货,假一赔十
询价
NUMONYX
24+
BGA
60000
询价
ST
23+
BGA
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
ST
19+
BGA
32000
原装正品,现货特价
询价
ST
1948+
BGA
6852
只做原装正品现货!或订货假一赔十!
询价
NUMONYX
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST
24+
(BGA)
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST
20+
BGA
11520
特价全新原装公司现货
询价
更多NAND01GR3B2CN6E供应商 更新时间2025-5-8 15:31:00