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NAND01GR3B2C

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CN5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CN5F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CN6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CN6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CZA5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CZA5F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CZA6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

NAND01GR3B2CZF5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件:1.6385 Mbytes 页数:67 Pages

NUMONYX

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NAND

  • 存储容量:

    1Gb (128M x 8)

  • 写周期时间 - 字,页:

    25ns

  • 访问时间:

    25ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    1.7V ~ 1.95V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    63-TFBGA

  • 供应商器件封装:

    63-VFBGA(9.5x12)

供应商型号品牌批号封装库存备注价格
Micron
17+
BGA
6200
询价
Numonyx
BGA
320
正品原装--自家现货-实单可谈
询价
STM
25+
VFBGA63
12600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NUMONYX
24+
BGA
5000
只做原装公司现货
询价
Numonyx
23+
NA
3680
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
Micron
24+
BGA
50000
专营Micron全线品牌假一赔万原装进口货可开增值税发票
询价
STM
23+
VFBGA63
8560
受权代理!全新原装现货特价热卖!
询价
NUMONYX
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
ST
25+23+
QFN
29870
绝对原装正品现货,全新深圳原装进口现货
询价
ST
19+
BGA
32000
原装正品,现货特价
询价
更多NAND01GR3B2C供应商 更新时间2026-1-27 9:46:00