丝印：N60；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors, R1, R2 • Lead, Halogen and Antimony Free, RoHS Compliant • Green Device (Notes 2 and 3)

文件：79.88 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：N60；Package：DFN3030-8B；N-Channel 60-V (D-S) MOSFET

文件：284.27 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：N60；Package：DFN3333-8A；N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.

文件：434.33 Kbytes 页数：5 Pages

LRC

乐山无线电

N-channel MOSFET 600V, 1A, 9.3Ω

Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0

文件：262.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 1A, 9.3Ω

Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0

文件：262.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

文件：280.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

文件：280.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

文件：280.47 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

文件：280.47 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET 600V, 4A, 2.0Ω

Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0

文件：264.73 Kbytes 页数：8 Pages

RENESAS

瑞萨