N-channel MOSFET 600V, 1A, 9.3Ω

Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0

文件：262.28 Kbytes 页数：8 Pages

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N-channel MOSFET 600V, 1A, 9.3Ω

Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0

文件：262.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

60W Open Frame Single Output

[YCL] Feature: ● 90 to 264Vac universal input range. ● UL/CUL, TUV, CB safety meet(approval). ● EMI/RFI meet VDE & FCC limit B. ● Low cost & compact size. ● 60Watts in127´76.2´44.1mm Size. 2 Year Warranty.

文件：41.67 Kbytes 页数：2 Pages

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