N-channel MOSFET 600V, 4A, 2.0Ω

Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0

文件：264.73 Kbytes 页数：8 Pages

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N-channel MOSFET 600V, 6A, 1.2Ω

Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0

文件：260.45 Kbytes 页数：8 Pages

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N-channel MOSFET 600V, 6A, 1.2Ω

Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0

文件：260.45 Kbytes 页数：8 Pages

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N-channel MOSFET 600V, 8A, 0.75Ω

Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8.

文件：260.72 Kbytes 页数：8 Pages

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N-channel MOSFET 600V, 8A, 0.75Ω

Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8.

文件：260.72 Kbytes 页数：8 Pages

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40 V ??60 A ??N-channel Power MOS FET Application: Automotive

文件：272.04 Kbytes 页数：8 Pages

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丝印：N6066SS；Package：SO-8；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters Features an

文件：492.1 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N6040SS；Package：SO-8；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power management functions  DC-DC converters Features and Benefits  100 Unclamp

文件：612.78 Kbytes 页数：7 Pages

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美台半导体

丝印：N6069；Package：SOT223；60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor controls  Transformer driving switches  DC-DC converters  Power management functions  Un

文件：694.07 Kbytes 页数：7 Pages

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美台半导体

丝印：N6035SDW；Package：PowerDI5060-8；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  Rated to +175°C –

文件：752.87 Kbytes 页数：7 Pages

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美台半导体