IMN11

Marking：N11；Package：SOT-457；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

UMN11N

Marking：N11；Package：SOT-363；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

EMN11

Marking：N11；Package：EMD6；Switching diode

EMN11

Marking：N11；Package：EMD6；Switching diode

EMN11

Marking：N11；Package：EMD6；Switching Diode

IMN11

Marking：N11；Package：SOT-457；Switching Diode

PBRN113ES

Marking：N113ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

PBRN113ZS

Marking：N113ZS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

SNN1120L10Q

Marking：N1120L10；Package：SOT-223；100V Fast Switching MOSFETs