丝印：N113ZS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：741.87 Kbytes 页数：17 Pages

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NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

文件：162.13 Kbytes 页数：17 Pages

恩XP

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：271.43 Kbytes 页数：12 Pages

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NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：741.87 Kbytes 页数：17 Pages

NEXPERIA

安世