DDC114TH

Marking：N12；Package：SOT563；NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryPNPTypesAvailable(DDA) -Built-InBiasingResistors -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3)

DDTC114TCA

Marking：N12；Package：SOT-23；NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(DDTA) •Built-InBiasingResistors,R1only •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFreeGreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforHighReliabil

DDTC114TCA

Marking：N12；Package：SOT-23；NPN PRE-BIASED SMALL SIGNAL SOT-23

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(DDTA) •Built-InBiasingResistor,R1only •Lead,HalogenandAntimonyFree,RoHS CompliantGreenDevice(Notes2and3)

DDTC114TCA-7-F

Marking：N12；Package：SOT23；NPN PRE-BIASED TRANSISTOR IN SOT23

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(DDTA) •Built-InBiasingResistors,R1only •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheDDTC143TCAQissuitableforautomotiveapplication

DDTC114TUA-13-F

Marking：N12；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •Built-InBiasingResistor,R1Only •SurfaceMountPackageSuitedforAutomatedAssembly •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecif

DDTC114TUA-7-F

Marking：N12；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •Built-InBiasingResistor,R1Only •SurfaceMountPackageSuitedforAutomatedAssembly •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecif

DMN10H099SFGQ-13

Marking：N12；Package：POWERDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Features LowRDS(ON)ensureson-statelossesareminimized. Smallformfactorthermallyefficientpackageenableshigher densityendproducts. Occupiesjust33oftheboardareaoccupiedbySO-8,enabling smallerendproduct. TotallyLead-Free&FullyRoHSCompliant(Notes1&2) 

DMN10H099SFGQ-7

Marking：N12；Package：POWERDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Features LowRDS(ON)ensureson-statelossesareminimized. Smallformfactorthermallyefficientpackageenableshigher densityendproducts. Occupiesjust33oftheboardareaoccupiedbySO-8,enabling smallerendproduct. TotallyLead-Free&FullyRoHSCompliant(Notes1&2) 

ESD12V23T-LA

Marking：N12；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Workingvoltage:3.3~24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±25kV(air),±20kV(contact):3.3V~8V IE

ESD12V23TS-LA

Marking：N12；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Lowclampingvoltage WorkingVoltages:3.3V~24V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs