POWER FIELD EFFECT TRANSISTOR

文件：170.28 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

TOS POWER FET 10 AMPERES RDS(on) = 0.3 OHM 150VOLTS

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 页数：4 Pages

GESS

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：89.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司