TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount

TMOS POWER FET 8 AMPERES RDS(on) = 0.15 OHM 60 VOLTS

文件：223.14 Kbytes 页数：6 Pages

Motorola

摩托罗拉

TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount

TMOS POWER FET 8 AMPERES RDS(on) = 0.15 OHM 60 VOLTS

文件：223.14 Kbytes 页数：6 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：346.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：779.96 Kbytes 页数：5 Pages

Bychip

百域芯

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features 12 A, 60 V. RDS(ON) = 0.15 Ω @ VGS = 10 V Low gate charge. Fast switching spe

文件：380.65 Kbytes 页数：6 Pages

Fairchild

仙童半导体

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

文件：206.03 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

文件：209.48 Kbytes 页数：10 Pages

Motorola

摩托罗拉

M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：179.76 Kbytes 页数：3 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：346.58 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)

文件：380.11 Kbytes 页数：6 Pages

Motorola

摩托罗拉