N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

功率 MOSFET，12 A，60 V，N 沟道，DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm • Avalanche Energy Specified\n• IDSS and VDS(on) Specified at Elevated Temperature;

ONSEMI

安森美半导体

TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount

恩XP

N-channel enhancement-mode silicon gate, 10A, 60V

恩XP