isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：359.2 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

文件：172.65 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

文件：172.65 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：345.24 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：359.43 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：344.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, pow

文件：344.39 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：252.97 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：208.13 Kbytes 页数：10 Pages

Motorola

摩托罗拉

TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

文件：245.06 Kbytes 页数：10 Pages

Motorola

摩托罗拉