零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MTD5P06E | TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM TMOSE-FETPowerFieldEffectTransistorsDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐60V RDSON(MAX.)150mΩ ID‐2.2A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐60V RDSON(MAX.)150mΩ ID‐2.4A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
HighPowerandcurrenthandingcapability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
PowerMOSFET5Amps,60VoltsP?묬hannelDPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET5AMPERES60VOLTSRDS(on)=0.450OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET5AMPERES60VOLTSRDS(on)=0.450OHM TMOSVPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET5Amps,60VoltsP?묬hannelDPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
60VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-10V,ID@-5A | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@4A | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT |
详细参数
- 型号:
MTD5P06E
- 制造商:
Motorola Inc
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON/安森美 |
2024+实力库存 |
5000 |
只做原厂渠道 可追溯货源 |
询价 | |||
ON |
360000 |
原厂原装 |
1305 |
询价 | |||
ON |
SOT252 |
35000 |
询价 | ||||
ON |
2017+ |
26589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | |||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
59810 |
正品授权货源可靠 |
询价 | |||
ON |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
M |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 |
相关规格书
更多- MTD5P06V
- MTD5P06V1
- MTD5P06VT4G
- MTD6000PT
- MTD6000PT-T
- MTD6010A
- MTD6060
- MTD6100PT
- MTD6140
- MTD6170
- MTD64
- MTD6501C_12
- MTD6501C-HC1
- MTD6501C-LC1
- MTD6501D-H
- MTD6501D-L
- MTD6501G
- MTD6501G-HC1
- MTD6502B
- MTD6502B-HC1-01
- MTD6502B-L
- MTD6502B-LC1-01
- MTD6505
- MTD6505T-I/NA
- MTD658
- MTD6N10
- MTD6N10E1
- MTD6N15-1
- MTD6N15T4G
- MTD6N20
- MTD6N20E1
- MTD6N20ET4G
- MTD6P10E
- MTD7030
- MTD8000M3B-T
- MTD8000N
- MTD8000N4T
- MTD8000N4-T-DIG
- MTD8000P
- MTD8010M
- MTD8060P
- MTD8060W_2
- MTD8600N4-T
- MTD8600NT
- MTD8600N-T-DIG
相关库存
更多- MTD5P06V_03
- MTD5P06VT4
- MTD5P06VT4GV
- MTD6000PTT
- MTD6000PT-T-DIG
- MTD6040
- MTD6100
- MTD6100PT-DIG
- MTD6160
- MTD6180
- MTD6501C
- MTD6501C-H
- MTD6501C-L
- MTD6501D
- MTD6501D-HC1
- MTD6501D-LC1
- MTD6501G-H
- MTD6501G-LC1
- MTD6502B-HC1-00
- MTD6502B-HC1-02
- MTD6502B-LC1-00
- MTD6502B-LC1-02
- MTD6505T-E/NA
- MTD655
- MTD658E
- MTD6N10E
- MTD6N15
- MTD6N15T4
- MTD6N15T4GV
- MTD6N20E
- MTD6N20ET4
- MTD6N20ET5G
- MTD6P10ET4
- MTD7030A
- MTD8000M3B-T-DIG
- MTD8000N_2
- MTD8000N4-T
- MTD8000NW
- MTD8000W
- MTD8060N
- MTD8060W
- MTD8600N4T
- MTD8600N4-T-DIG
- MTD8600N-T
- MTD8600T4-T