MTD5N25E中文资料PDF规格书
MTD5N25E规格书详情
TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number
产品属性
- 型号:
MTD5N25E
- 制造商:
Motorola Inc
- 制造商:
ON Semiconductor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTO |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON/安森美 |
2022+ |
SOT252 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ONSEMI |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
询价 | ||
ON |
20+ |
TO-252 |
90000 |
原装正品现货/价格优势 |
询价 | ||
ON |
23+ |
TO-252 |
6893 |
询价 | |||
ON/安森美 |
23+ |
TO-252 |
6000 |
原装正品,支持实单 |
询价 | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON/安森美 |
22+ |
TO-252 |
94853 |
询价 | |||
ON/安森美 |
2024+实力库存 |
15000 |
只做原厂渠道 可追溯货源 |
询价 |