isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

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ISC

无锡固电

100V N-Channel Enhancement Mode MOSFET

文件：405.63 Kbytes 页数：8 Pages

PANJIT

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100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@2.5A

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PANJIT

強茂

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@4A

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強茂