RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment. • Typical Per

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st

文件：439.15 Kbytes 页数：12 Pages

Motorola

摩托罗拉

FREESCALE
TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

ON
SOT143

ON

上传：深圳市英科美电子有限公司

FREESCAL
TO270-2

FREESCAL

上传：深圳市正纳电子有限公司