MRF9080LSR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LSR3

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicationsin26voltbasestationequipment. •TypicalPer