RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure NF =

文件：85.97 Kbytes 页数：4 Pages

Microsemi

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, High Frequency Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure: NF = 2.5 dB (typ) @ f =

文件：90.31 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microchip

微芯科技

Trans GP BJT NPN 12V 0.04A 4-Pin TO-72

NJS