N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--C

文件：538.28 Kbytes 页数：14 Pages

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RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--

文件：646.95 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--C

文件：538.28 Kbytes 页数：14 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--C

文件：538.28 Kbytes 页数：14 Pages

恩XP

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--

文件：646.95 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

790-820 MHz，96 W平均值，28 V单载波W-CDMA射频功率LDMOS

The MRF8P8300HR6 and MRF8P8300HSR6 are designed for W-CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C ;

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Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V

The MRF8P8300HR6 and MRF8P8300HSR6 are designed for W-CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C ;

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