NPN SILICON RF LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. FEATURES INCLUDE: • Min gain 8.0 dB @ 750 mW/870 MHz • Silicon Nitride passivated • Low cost Plastic Package

文件：25.44 Kbytes 页数：1 Pages

ASI

NPN SILICON RF LOW POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.FEATURES INCLUDE:\n• Min gain 8.0 dB @ 750 mW/870 MHz\n• Silicon Nitride passivated\n• Low cost Plastic Package

ASI Semiconductor

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60 typical • R1 suffix – Tape and Reel, 500 units • R2 suffix – Tape and Reel, 2500 units

文件：27.05 Kbytes 页数：1 Pages

ASI

丝印：8372；Package：SO-8；RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

文件：101.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

文件：62.55 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

文件：62.55 Kbytes 页数：3 Pages

ADPOW

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

文件：101.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

文件：101.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges.FEATURES:\n• POUT = 750 mW\n• PG = 8.0 dB min.\n• η = 60% typical\n• R1 suffix – Tape and Reel, 500 units\n• R2 suffix – Tape and Reel, 2500 units

ASI Semiconductor

RF LOW POWER TRANSISTOR NPN SILICON

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