MRF838A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheMRF838AisaCommonEmitterDeviceDesignedforClassA,BandCAmplifierApplicationsupto1.0GHz. FEATURESINCLUDE: •GoldMetallization •EmitterBallasting •HighGain

MUR838

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Singlerectifierconstruction •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

MUR838

GLASSPASSIVATEDSUPERFASTRECTIFIER

MV838

ABRUPTVARACTORDIODES

ABRUPTVARACTORDIODES

MZ838

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

OPA838

OPA8381mA,300MHzGainBandwidth,Voltage-FeedbackOpAmp

1Features •Gainbandwidthproduct:300MHz •Very-low(trimmed)supplycurrent:950μA •Bandwidth:90MHz(AV=6V/V) •Highfull-powerbandwidth:45MHz,4VPP •Negativerailinput,rail-to-railoutput •Single-supplyoperatingrange:2.7Vto5.4V •25°Cinputoffset:±125μV(maximum) •In

OPA838

1-mA,300-MHzGainBandwidth,Voltage-FeedbackOpAmp

OPA838

50-MHz,170-關A,Negative-RailIn,Rail-to-RailOut,Voltage-FeedbackAmplifier

OPA838IDBVR

1-mA,300-MHzGainBandwidth,Voltage-FeedbackOpAmp

OPA838IDBVR

OPA8381mA,300MHzGainBandwidth,Voltage-FeedbackOpAmp

1Features •Gainbandwidthproduct:300MHz •Very-low(trimmed)supplycurrent:950μA •Bandwidth:90MHz(AV=6V/V) •Highfull-powerbandwidth:45MHz,4VPP •Negativerailinput,rail-to-railoutput •Single-supplyoperatingrange:2.7Vto5.4V •25°Cinputoffset:±125μV(maximum) •In