RF POWER TRANSISTOR NPN SILICON

文件：151.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN Silicon RF Power Transistor

文件：103.06 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

900 MHz, 30 W, 24 V RF Power Transistor

Overview MRF897 removed from active portfolio. Possible Replacement Part: MRF9045LSR1.The MRF897 is designed for 24 VoltUHF large–signal, common emitter, class–ABlinear amplifier applications in industrial andcommercial FM/AM equipment operating in the range800–970 MHz. •Specified 24 Volt, 900 MHz Characteristics\n Output Power = 30 Watts\n Minimum Gain = 10 dB @ 900 MHz, class–AB\nMinimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)\nMaximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)\n•Characterized with Series Equivalent Large–Signal\nParameters from 8;

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Trans GP BJT NPN 30V 4A 3-Pin NI-780S

NJS

新泽西半导体

RF POWER TRANSISTOR NPN SILICON

文件：172.28 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN Silicon RF Power Transistor

文件：168.61 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

900 MHz, 30 W, 24 V RF Power Transistor

Overview MRF897R removed from active portfolio. Possible Replacement Part: MRF9045LR1.The MRF897R is designed for 24Volt UHF large–signal, common emitter,class–AB linear amplifier applications inindustrial and commercial FM/AM equipment operating in the range 800–970 MHz. •Specified 24 Volt, 900 MHz Characteristics\nOutput Power = 30 Watts\nMinimum Gain = 10.5 dB @ 900 MHz, class–AB\nMinimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)\n Maximum Intermodulation Distortion\n –30 dBc @ 30 Watts (PEP)\n•Characterized with Series Equivalent Large–Signal\nParameters fro;

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