MRF6VP11KH中文资料1.8-150 MHz，1000 W，50 V宽带射频功率LDMOS数据手册恩XP规格书

描述 Description

The MRF6VP11KHR6 and MRF6VP11KGSR5 are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.

特性 Features

• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 26 dBDrain Efficiency: 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
NOTE: PARTS ARE PUSH–PULL