N-Channel Enhancement-Mode Lateral MOSFET

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1.8--150 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 130 MHz: V

文件：446.97 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：812.27 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：748.8 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

文件：859.04 Kbytes 页数：13 Pages

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：468.81 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：812.27 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：468.81 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：748.8 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1.8-150 MHz，1000 W，50 V宽带射频功率LDMOS

The MRF6VP11KHR6 and MRF6VP11KGSR5 are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 26 dBDrain Efficiency: 71%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power\n• Characterized with Series Eq;

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