RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra

文件：550.17 Kbytes 页数：12 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra

文件：550.17 Kbytes 页数：12 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

文件：383.73 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi

文件：562.19 Kbytes 页数：12 Pages

Motorola

摩托罗拉