RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

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Motorola

摩托罗拉

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETsDesigned for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.\n• Typical W–CDMA Performance: 2140 MHz, 28 Volts\n5 MHz Offset @ 4.096 MHz BW,

恩XP

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

Module-12

MICROCHIP/微芯

上传：深圳市明嘉莱科技有限公司

Module-12

MICROCHIP/微芯

上传：深圳市明嘉莱科技有限公司