MRF21060R3

RF Power Field Effect Transistors

2170MHz,60W,28VLATERALN–CHANNELRFPOWERMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.1to2.2GHz.SuitableforW–CDMA,CDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalW–CDMAPerformance:2140MHz,28Volts 5MHzOffs

MRF21060R3

RF Power Field Effect Transistors;

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETsDesigned for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.\n• Typical W–CDMA Performance: 2140 MHz, 28 Volts\n5 MHz Offset @ 4.096 MHz BW, 15 DTCH\nOutput Power — 6.0 Watts\nPower Gain — 12.5 dB\nDrain Efficiency — 15%\n• Internally Matched, Controlled Q, for Ease of Use\n• High Gain, High Efficiency and High Linearity\n• Integrated ESD Protection\n• Designed for Maximum Gain and Insertion Phase Flatness\n• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power\n• Excellent Thermal Stability\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

恩XP

MRF21060SR3

FREESCALE
TO-272

MRF24J40MA-I/RM

MICROCHIP/微芯
Module-12

MICROCHIP/微芯

MRF24J40MAT-I/RM

MICROCHIP/微芯
Module-12

MICROCHIP/微芯