RF Power Field Effect Transistors

文件：282.21 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：282.21 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

LOW NOISE TRANSISTORS

文件：181.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

LOW NOISE TRANSISTORS

文件：181.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

LOW NOISE TRANSISTORS

文件：181.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

LOW NOISE TRANSISTORS

文件：181.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

LOW NOISE TRANSISTORS

文件：181.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

2.0 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20030R is designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier applications. Suitable for frequency modulated, ampl \n•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics\nOutput Power — 30 Watts (PEP)\nPower Gain — 9.8 dB\n Efficiency — 34%\n Intermodulation Distortion —   –28 dBc\n•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics\n Output Power — 30 Watts\n Power Gain — 11 dB\n Efficien;

恩XP

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060R is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This dev \n•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts\n Output Power — 60 Watts (PEP)\n\tPower Gain — 9.8 dB\n\tEfficiency — 33%\n\tIntermodulation Distortion —\n\t  –32 dBc\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Le;

恩XP

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060RS is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This de \n•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts\n Output Power — 60 Watts (PEP)\n\tPower Gain — 9.8 dB\n\tEfficiency — 33%\n\tIntermodulation Distortion —\n\t  –32 dBc\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Le;

恩XP