RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

文件：350.65 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

文件：300.22 Kbytes 页数：8 Pages

Motorola

摩托罗拉

1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview The MRF19090R3 and MRF19090SR3 are designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.\nArchived content is no longer updated and is made available for historical reference \n•Typical CDMA Performance: 1990 MHz, 26 Volts\nIS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\n   Output Power: 9 Watts Avg.\n   Power Gain: 10 dB\n   Adjacent Channel Power:\n      885 kHz:  –47 dBc @ 30 kHz BW\n      1.25 MHz:  –55 dBc @ 12.5 kHz BW\n      2.25 MHz:  –55 dBc @ 1 MHz ;

恩XP

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

文件：350.65 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

文件：300.22 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

文件：350.65 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

文件：300.22 Kbytes 页数：8 Pages

Motorola

摩托罗拉