MMDT2907A

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE60VoltsPOWER150mW FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-60V •CollectorcurrentIC=-600mA •IncompliancewithEURoHS2002/95/ECdirectives

MMDT2907A

PNP General Purpose Amplifier

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ComplementaryNPNTypeavailableMMDT2222A •Capableof200mWattsofPd,600mAcontinuouscollectorcurrent. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •Epoxyme

MMDT2907A

NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION TheUTCMMDT2907AisanDualPNPgeneralpurposeamplifier.it’ssuitableforamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

MMDT2907A

DUAL TRANSISTOR (PNPPNP)

SOT-363Plastic-EncapsulateTransistors FEATURE ●ComplementaryNPNTypeavailableMMDT2222A

MMDT2907A

Plastic-Encapsulate Transistors

FEATURES ComplementaryPNPTypeavailableMMDT29222A

MMDT2907A

Marking：K2F；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT2222A. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

MMDT2907A

PNPPNP Plastic-Encapsulate Transistors

Features ComplementaryNPNTypeavailableTPMMDT2222A

MMDT2907A

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MMDT2907A-7

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •Ultra-SmallSurfaceMountPackage •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforHighRe

MMDT2907AG-AL6-R

NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION TheUTCMMDT2907AisanDualPNPgeneralpurposeamplifier.it’ssuitableforamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.