COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES • Complementary Pair • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • One MMDT2222A-Type NPN One MMDT2907A-Type PNP • Ideal for Low Power Amplification and Switching • Also Available in Lead Free Version • In compliance with EU RoHS 2002/95/EC directive

文件：185.26 Kbytes 页数：6 Pages

PANJIT

強茂

NPNPNP Dual General Purpose Transistors

Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN), One 2907A Type (PNP) * Ideal for Low Power Amplication and Switching

文件：131.65 Kbytes 页数：5 Pages

WEITRON

NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA. FEATURES * Low VCE(SAT), VCE(SAT)=0.4V (typ.)@IC /IB=150mA/15mA, VCE(SAT)=1.4V (typ.) @IC/IB = 300mA/30mA * High collector

文件：127.45 Kbytes 页数：3 Pages

UTC

友顺

NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA. FEATURES * Low VCE(SAT), VCE(SAT)=0.4V (typ.)@IC /IB=150mA/15mA, VCE(SAT)=1.4V (typ.) @IC/IB = 300mA/30mA * High collector

文件：127.45 Kbytes 页数：3 Pages

UTC

友顺

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pair • Epitaxial Planar Die Construction • One 2222A Type (NPN), One 2907A Type (PNP) • Ideal for Low Power Amplification and Switching • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 3)

文件：347.32 Kbytes 页数：4 Pages

DIODES

美台半导体

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pair • Epitaxial Planar Die Construction • One 2222A Type (NPN), One 2907A Type (PNP) • Ideal for Low Power Amplification and Switching • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 3)

文件：347.32 Kbytes 页数：4 Pages

DIODES

美台半导体

40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO >40V • IC = 600mA High Collector Current • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-Small Surf

文件：458.19 Kbytes 页数：6 Pages

DIODES

美台半导体

40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO >40V • IC = 600mA High Collector Current • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-Small Surf

文件：458.19 Kbytes 页数：6 Pages

DIODES

美台半导体

PNP General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Complementary NPN Type available MMDT2222A • Capable of 200mWatts of Pd, 600mA continuous collector current. • Operating and Storage Junction Temperatures: -55°C to 150°C • Epoxy me

文件：334.8 Kbytes 页数：3 Pages

MCC

丝印：K2F；Package：SOT-363；Dual NPN Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMDT2222A. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：165.56 Kbytes 页数：3 Pages

BILIN

银河微电