NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION The UTC MMDT2907A is an Dual PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.

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UTC

友顺

丝印：K2F；Package：SOT-363；COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features & Benefits • Complementary Pairs One 2222A Type (NPN) • One 2907A Type (PNP) • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

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DIODES

美台半导体

PNP General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Complementary NPN Type available MMDT2222A • Capable of 200mWatts of Pd, 600mA continuous collector current. • Operating and Storage Junction Temperatures: -55°C to 150°C • Epoxy me

文件：334.8 Kbytes 页数：3 Pages

MCC

丝印：K2F；Package：SOT-363；Dual NPN Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMDT2222A. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：165.56 Kbytes 页数：3 Pages

BILIN

银河微电

DUAL TRANSISTOR (PNPPNP)

SOT-363 Plastic-Encapsulate Transistors FEATURE ● Complementary NPN Type available MMDT2222A

文件：1.81909 Mbytes 页数：4 Pages

JIANGSU

长电科技

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 60 Volts POWER 150 mW FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V • Collector current IC = -600mA • In compliance with EU RoHS 2002/95/EC directives

文件：106.33 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：K2F；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMDT2222A. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：891.91 Kbytes 页数：5 Pages

LUGUANG

鲁光电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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WINNERJOIN

永而佳

Plastic-Encapsulate Transistors

FEATURES Complementary PNP Type available MMDT29222A

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HOTTECH

合科泰

PNPPNP Plastic-Encapsulate Transistors

Features Complementary NPN Type available TPMMDT2222A

文件：1.4616 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子