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MMBT5551

TRANSISTOR(NPN)

FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

文件:1.67128 Mbytes 页数:2 Pages

HTSEMI

金誉半导体

MMBT5551

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

文件:846.76 Kbytes 页数:4 Pages

JIANGSU

长电科技

MMBT5551

丝印:G1;Package:SOT-23;High Voltage Transistors

High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements.

文件:634.91 Kbytes 页数:5 Pages

LEIDITECH

雷卯电子

MMBT5551

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

文件:261.14 Kbytes 页数:6 Pages

PANJIT

強茂

MMBT5551

General Purpose Transistor

FEATURES Power dissipation PCM: 0.3 W (Tamb=25°C) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

文件:331.98 Kbytes 页数:3 Pages

SECOS

喜可士

MMBT5551

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications.

文件:194.46 Kbytes 页数:2 Pages

SEMTECH_ELEC

先之科半导体

MMBT5551

丝印:G1;Package:SOT-23;TRANSISTOR (PNP)

FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching

文件:840.4 Kbytes 页数:4 Pages

SY

顺烨电子

MMBT5551

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT5401). ● Ideal for Medium Power Amplification and Switching

文件:170.83 Kbytes 页数:2 Pages

TRSYS

Transys Electronics

MMBT5551

丝印:G1;Package:SOT-23;NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件:641.41 Kbytes 页数:3 Pages

LUGUANG

鲁光电子

MMBT5551

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching

文件:583.37 Kbytes 页数:2 Pages

DGNJDZ

南晶电子

产品属性

  • 产品编号:

    MMBT5551

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    200mV @ 5mA,50mA

  • 电流 - 集电极截止(最大值):

    50nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    80 @ 10mA,5V

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 描述:

    TRANS NPN 160V 0.6A SOT23-3

供应商型号品牌批号封装库存备注价格
FOSAN/富信
24+
SOT-23
30000
富信一级代理SOT-23.89.123.323封装全系列二三极管MOS管
询价
CJ长电
2010
SOT23
2939
全新原装 正品现货
询价
FAIRCHILD/仙童
24+
SOT23
8950
BOM配单专家,发货快,价格低
询价
FAIRCHILD/仙童
25+
SOT-23
154465
明嘉莱只做原装正品现货
询价
CJ
24+
SOT-23
10000
只做现货
询价
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货MMBT5551即刻询购立享优惠#长期有排单订
询价
23+
原厂封装
20839
专注原装正品现货特价中量大可定
询价
ON
25+
SOT-23
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
PANJIT/ 强茂
2019+
SOT23
36000
原盒原包装 可BOM配套
询价
长电
14+无铅
SOT-23
25700
优势产品,博盛微热卖!!!
询价
更多MMBT5551供应商 更新时间2025-9-18 16:13:00