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MJD41C

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

文件:195.8 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD41C

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * Designed for general purpose amplier and low speed switching applications. * Monolithic Construction With Built–in Base–Emitter Resistors.

文件:583.98 Kbytes 页数:5 Pages

WEITRON

MJD41C

isc Silicon NPN Power Transistors

文件:359.93 Kbytes 页数:3 Pages

ISC

无锡固电

MJD41C

Complementary Power Transistors

文件:89.89 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MJD41C

Complementary Power Transistors

文件:123.02 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD41C

Complementary Power Transistors

文件:78.58 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD41C-Q

丝印:MJD41CA;Package:DPAK;100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件:222.45 Kbytes 页数:10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD41C-251

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件:297.53 Kbytes 页数:2 Pages

ISC

无锡固电

MJD41C-252

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件:278.48 Kbytes 页数:2 Pages

ISC

无锡固电

MJD41CJ

100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件:229.4 Kbytes 页数:11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    1.5

  • IC Cont. (A):

    6

  • VCEO Min (V):

    100

  • VCBO (V):

    100

  • VEBO (V):

    5

  • VBE(on) (V):

    2

  • hFE Min:

    15

  • hFE Max:

    75

  • fT Min (MHz):

    3

  • PTM Max (W):

    20

  • Package Type:

    DPAK-3

供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价MJD41C即刻询购立享优惠#长期有货
询价
TO-252/220
2021
CJ
52500
全新原装公司现货
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ/长电
23+
TO-252
9000
只做进口原装假一罚百
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
CJ
20+
TO-252-2L
110
原装现货17377264928微信同号
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
18+
TO-252
85600
保证进口原装可开17%增值税发票
询价
长电
24+
TO-252
65300
一级代理/放心购买!
询价
CJ/长电
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多MJD41C供应商 更新时间2025-10-7 14:14:00